(China (Mainland))
Product Summary
The K7N803645B-PC16 is a 9,437,184 bits Synchronous Static SRAM. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low". Asynchronous inputs include the sleep mode enable(ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature of K7N803645B-PC16 eliminates complex offchip write pulse generation and provides increased timing flexibility for incoming signals. For read cycles, pipelined SRAM output data is temporarily stored by an edge triggered output register and then released to the output buffers at the next rising edge of clock. The K7N803645B-PC16 is implemented with SAMSUNG high performance CMOS technology and is available in 100pin TQFP and Multiple power and ground pins minimize ground bounce.
Parametrics
K7N803645B-PC16 absolute maximum ratings: (1)Voltage on VDD Supply Relative to VSS VDD: -0.3 to 4.6 V; (2)Voltage on Any Other Pin Relative to VSS VIN: -0.3 to VDD+0.3 V; (3)Power Dissipation PD: 1.4 W; (4)Storage Temperature TSTG: -65 to 150 ℃; (5)Operating Temperature: Commercial TOPR 0 to 70 ℃; Industrial TOPR -40 to 85 ℃; (6)Storage Temperature Range Under Bias TBIAS: -10 to 85 ℃.
Features
K7N803645B-PC16 features: (1)25V ±5% Power Supply; (2)Byte Writable Function; (3)Enable clock and suspend operation; (4)Single READ/WRITE control pin; (5)Self-Timed Write Cycle; (6)Three Chip Enable for simple depth expansion with no data contention ; (7)A interleaved burst or a linear burst mode; (8)Asynchronous output enable control; (9)Power Down mode; (10)TTL-Level Three-State Outputs; (11)00-TQFP-1420A; (12)Operating in commeical and industrial temperature range.
Diagrams
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